Metal–insulator transition in two-dimensional electron systems
نویسندگان
چکیده
منابع مشابه
Metal-insulator transition in disordered two-dimensional electron systems.
We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase, which is stabilized by electronic interactions, from the insulating phase, where disorder prevails over the electronic interactions, has been identified. The existence of the quantum critical point leads to a divergence in the density of st...
متن کاملSpin transition in strongly correlated bilayer two-dimensional electron systems.
Using a combination of heat pulse and nuclear magnetic resonance techniques, we demonstrate that the phase boundary separating the interlayer phase coherent quantum Hall effect at nu(T) = 1 in bilayer electron gases from the weakly coupled compressible phase depends upon the spin polarization of the nuclei in the host semiconductor crystal. Our results strongly suggest that, contrary to the usu...
متن کاملMetal-insulator transition in two-dimensional electron systems
Abstract. The interplay between strong Coulomb interactions and randomness has been a long-standing problem in condensed matter physics. According to the scaling theory of localization, in two-dimensional systems of noninteracting or weakly interacting electrons, the ever-present randomness causes the resistance to rise as the temperature is decreased, leading to an insulating ground state. How...
متن کاملElectron-electron scattering in linear transport in two-dimensional systems.
We describe a method for numerically incorporating electron–electron scattering in quantum wells for small deviations of the distribution function from equilibrium, within the framework of the Boltzmann equation. For a given temperature T and density n, a symmetric matrix needs to be evaluated only once, and henceforth it can be used to describe electron–electron scattering in any Boltzmann equ...
متن کاملGlass Transition in a Two-Dimensional Electron System in Silicon
Large fluctuations of conductivity with time are observed in a low-mobility twodimensional electron system in silicon at low electron densities ns and temperatures. A dramatic increase of the noise power (∝ 1/fα) as ns is reduced below a certain density ng, and a sharp jump of α at ns ≈ ng, are attributed to the freezing of the electron glass at ns = ng. The data strongly suggest that glassy dy...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Reports on Progress in Physics
سال: 2003
ISSN: 0034-4885,1361-6633
DOI: 10.1088/0034-4885/67/1/r01